| 摘要 |
PURPOSE:To largely reduce a leak path and achieve high output and high efficiency by etching such that the narrowed part of reversed mesa structure is positioned on an active layer. CONSTITUTION:First, a laminated body is formed by successively laminating a p-InP buffer layer 2, an InGaAsP active layer 3, and an n-InP clad layer 4 on a p-InP substrate 1. Next, an SiO2 film is formed on the n-InP clad layer 4, and then etching is carried out so that the narrowed part Ma of reversed mesa is positioned on the active layer 3. Next, a p-InP current blocking layer 8 is grown, and an n-InP current blocking layer 9, a p-InP current blocking layer 10 are successively grown, and then an n-InGaAsP cap layer 7 is grown to form an element. In this way, the side part C of the active layer 3 is positioned at the surface of rapid crystal growth and the crystalline property of the side part C of the active layer 3 is improved. Therefore, when the p-InP current blocking layer 8, which is the first layer, is formed, a sufficiently homogeneous growth is achieved in a very short time at the side part C of the active layer 3, and the side part C and the vicinity thereof are included in a crystal. |
