| 摘要 |
PURPOSE:To prevent falling of thunderbolt and to reduce defects of picture image due to the thunderbolt by regulating a charge potential per 1mum film thickness of a photosensitive layer in an electrophotographic sensitive body consisting of an Se photoconductive material, to 5-9V. CONSTITUTION:Relations between the number of defect of picture images generated due to thunderbolt and charge potentials per 1mum film thickness of a photosensitive layer formed by vacuum deposition of an Se photoconductive material on an electroconductive base body have been researched by changing the amt. of vacuum deposition and performing a picture forming test. As a result, it has been found that such defects are reduced efficiently when the charge potential is <=9V per 1MUm. However, it is not practical to reduce the charge potential per 1mum to <=5V, because the film thickness will be >=120mum for 600-100V charge potential, which is used conventionally, requiring too much amt. of deposited material and too much time for vacuum deposition. Accordingly, it is concluded that defects of picture image due to falling of thunderbolt is most efficiently prevented when a charge potential per 1mum thickness of a photosensitive layer is 5-9V per 1mum. |
