| 摘要 |
PURPOSE:To improve breakdown strength characteristic of a semiconductor device by employing Al doped with carbon as the material of the gate electrode of a MIS transistor or the barrier electrode of a Schottky diode having a tunnel insulating film. CONSTITUTION:An Al layer doped with carbon of approx. 12wt.%, i.e., a gate electrode 12 of less than 1mum of thickness of an Al layer containing 12% of C is formed on a semiconductor substrate 2 interposed between a source region 6 and a drain region 8 through a gate oxide film 10 having 380Angstrom of thickness. A 12%C-Al gate MOS transistor has excellent breakdown strength characteristic, but has an effect of improving the breakdown strength characteristic even if it is not so high as this. In this case, the solid solution limit of carbon in Al is 0.05wt.%. In order to raise the effect, carbon concentration of this content or more is required. The higher the carbon concentration is the larger the effect tends to increase. If the carbon concentration of 10 times as large as that of solid solution limit, i.e., approx. 0.5wt.% or more is provided, the effect can be obtained. |
