| 摘要 |
PURPOSE:To mass-produce a porcelain element by molding a reduction reoxidation type semiconductor porcelain material, removing a binder, and then burying one surface of a burnt body in a material having a particle size of 100mum or more in which oxygen is diffused more slowly than in the main component followed by reduction burning and reoxidation. CONSTITUTION:MgO or a compound or mixture of Mg with other material is used as a material in which oxygen is diffused more slowly than that in a reduction reoxidation type semiconductor porcelain material, and ohmic electrodes are provided on the both surfaces of an element burnt, or a non-ohmic electrode is provided on one surface thereof. As the particle size of the material with the slow diffusion of oxygen is as large as 100mum or more, the reductive gas is easily made in contact with the burnt body to uniform the element characteristics. In the reoxidation, a high resistance layer is not present on the surface made in contact with this particle and formed only on the opposite surface to increase the electrostatic capacity. The dielectric constant is not reduced on the ohmic electrode, and the voltage resistance is improved on the non-ohmic electrode by the barrier of the interface, and thus a porcelain element can easily be mass-produced. |
