| 摘要 |
<p>PURPOSE:To prevent the short-circuit between a picture element electrode and a source electrode or a drain electrode, and to increase the manufacturing yield of products by connecting the picture element electrode through an aperture part in an inter-layer insulating film to the source electrode or drain electrode. CONSTITUTION:In a thin film transistor (TR) array device providing plural thin film TRs arranged to an array, and plural picture element electrodes 10, which are mutually connected, a silicon nitriding film 8 as the inter-layer insulating film is provided on a source electrode 7 and a drain electrode 6 of the thin film TR, and the source electrode 7 is connected through an aperture part 9 to the picture element electrode 10. Since the silicon nitriding film 10 exists between the drain electrode 6 and the picture element electrode 10, even when a photo resist defect exists, the interval between the picture element electrode 10 and the drain electrode 6 does not electrically short-circuited. Thus, the yield of the products can be improved.</p> |
