| 摘要 |
PURPOSE:To realize lattice matching and high reflectivity, and obtain reflectivity excellent in light confining effect by making one of semiconductor layers a super lattice structure wherein two kinds of semiconductor with different band gaps are alternately laminated. CONSTITUTION:In a semiconductor laser, a first semiconductor layer 10 and a second semiconductor layer 11 are alternately laminated on a semiconductor substrate 5 composed of InP, thereby forming a semiconductor multilayer film reflecting mirror 2. The respective thicknesses of the first semiconductor layer 10 and the second semiconductor layer 11 are equal to 1/4 of the oscillation wavelengths in the respective semiconductor layers. The first semiconductor layer 10 is constituted of InP. The second semiconductor layer 11 is constituted as a super lattice structure wherein semiconductor (potential well layer) 13 composed of In0.53Ga0.47As and semiconductor (potential barrier layer) 14 composed of InP are alternately laminated. Thereby, a reflecting mirror having high reflectivity and wide wavelength band can be formed, and high gain is realized by improving light confining effect. |
