| 摘要 |
PURPOSE:To eliminate film thickness irregularity of a base silicon oxide film by a simple processing, and obtain a three-layer insulating film having excellent dielectric strength by forming a base barrier silicon oxide film of a three-layer insulating film structure by using a deposition oxide film without growing a natural oxide film. CONSTITUTION:A polysilicon electrode 12 is formed on a silicon substrate 1, and high concentration impurity is introduced into the electrode. When a barrier silicon oxide film is formed on the electrode 12, a CVD silicon oxide film 2 is deposited by low pressure CVD method, after a natural oxide film is completely eliminated. Hence film thickness difference caused by the difference of face orientation and accelerated oxidation at grain boundary do not generate, thereby forming the CVD silicon oxide film 2 uniformly. A three-layer insulating film formed afterwards by the similar process has excellent dielectric strength. |
