INP/GAINASP DOUBLE HETEROSTRUCTURE LASER DIODES CONTAINING BUILT-IN CLOSING P-N JUNCTIONS ON A DOUBLE CHANNELED SUBSTRATE, WITH BURIED ACTIVE LAYER AND ITS PRODUCTION BY MEANS OF THE ONE-STEP LIQUID PHASE EPITAXY

摘要

The wafer containing the laser structure grown in the described way, is thinned on the backside (17) preferably to 100-200 /um, thereafter, onto the p-side (16) preferably Au/Au Zn is applied in a thickness of 200-1400 .degree. as a contact metal layer (8a) , while onto the n-side (17) contact metal layer (Bb) is applied, preferably Au Ge/Ni/Au in a thickness of 3000/700/1000 .ANG. by means of vaporization, thereafter contact layers (Ba,Bb) are subjected to heat treatment at 420 C.degree. in H2 gas space, preferably for 1D seconds.