| 摘要 |
PURPOSE:To reduce a reverse current by disposing a p<+> type region between p-type regions of first and second p-n junction diodes through a semiconductor region, and providing electrodes for connecting to the semiconductor region. CONSTITUTION:In a dual diode, when a voltage in which a potential at a first anode electrode 10 side becomes positive is applied between the first anode electrode 10 and a cathode electrode 13 and a reverse voltage is applied between a second anode electrode 12 and the cathode electrode 13, a diode 6 is conducted, and y diode 7 is interrupted. Accordingly, a leakage current flowing to the diode 7 is reduced. When a forward bias voltage is applied to the diode 6, part of holes injected from a p<+> type region 4 to an n-type region 3 is diffused laterally, but since the current amplification factor of a parasitic p-n-p transistor having the region 4 as an emitter, the region 3 as a base and a p<+> type region 14 as a collector is small, a forward current branched to the transistor is small. |
