发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the deterioration of device characteristics and the disconnection of wirings, and to improve reliability positively by dividing and forming a wafer scale integrated-circuit element into a plurality of pieces and connecting the terminals of mutually corresponding each piece by wires. CONSTITUTION:A lead frame 11 composed of an iron-nickel alloy or a copper alloy is punched and shaped. A large number of pieces 12a divided and formed by crosswise dicing a wafer scale integrated-circuit element 12 are joined at the specified positions of the lead frame 11, and the terminals of the mutually corresponding each piece 12a in these pieces 12a are connected by wires 14 made up of the extremely small-gage wires of gold (Au), aluminum (Al) or the like. The terminals 15 of the pieces 12a and the leads 16 of the lead frame 11 are connected by wires 17 composed of the extremely small-gage wires of gold (Au), aluminum (Al) or the like. Accordingly, stress generated in the whole wafer scale integrated circuit element 12 by thermal expansion can be dispersed to each piece 12a.
申请公布号 JPH02155261(A) 申请公布日期 1990.06.14
申请号 JP19880310333 申请日期 1988.12.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUTSUMI TOSHIAKI;SUGAHARA KAZUYUKI;HOSONO KUNIHIRO
分类号 H01L25/18;H01L21/52;H01L21/60;H01L25/04 主分类号 H01L25/18
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