| 摘要 |
The invention relates to organometallic compounds which are intramolecularly stabilized and have a cyclic or bicyclic structure, and their use to produce thin films and epitactic layers by gas-phase deposition. The invention concerns an organometallic compound of the formula (I) where M is aluminium, indium or gallium, Y is -NR<3>R<4>, PR<3>R<4>, -AsR<3>R<4>, -SbR<3>R<4>, -F or a perfluoroalkyl group with 1-7 C-atoms and the symbols R<1>, R<2>, R<3>, R<4> and X are as defined in claim 1. |
