| 摘要 |
PURPOSE:To prevent a semiconductor substrate from having any microcrack at all as well as a rear side metallic layer from being released by any pollution on the rear side by a method wherein, after forming a protective film on masks and bump electrodes, the rear side main surface is ground up. CONSTITUTION:Bump forming resist films 5 to be masks in almost the same film thickness as that of straight bumps 6 to be formed on the surface of a semiconductor 1 are formed and then opening parts are formed on the bump forming parts 6 by photolithography. The bumps 6 are formed by plating process. A protective resist film 7 is formed without removing the films 5. The film 7 offsets the difference in the levels of the films 5, the bumps 6 and a plating electrode 1a to make the film 7 almost in parallel with the rear side of the substrate 1. Next, the substrate 1 is mounted to bring the film 7 into contact with the surface of a surface plate 9 of a grinder so that the rear side of the substrate 1 may be ground up by grindstones 8. Through these procedures, the semiconductor substrate can be prevented from having any microcrack at all as well as a rear side metallic layer from being released by any pollution on the rear side.
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