| 发明名称 |
PROCESS USING PLASMA FOR FORMING CONDUCTIVE THROUGH-HOLES THROUGH A DIELECTRIC LAYER |
| 摘要 |
A conductive through-hole is formed by plasma etching a hole completely through a dielectric sandwiched between conductors and by deforming at least one conductor which has been undercut during the etching. |
| 申请公布号 |
EP0144943(B1) |
申请公布日期 |
1990.06.13 |
| 申请号 |
EP19840114614 |
申请日期 |
1984.12.01 |
| 申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
JOHNSON, DANIEL DAVID |
| 分类号 |
H05K3/00;H05K3/40 |
主分类号 |
H05K3/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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