| 摘要 |
PURPOSE:To enhance hardness of the surface of a photosensitive layer and to prevent unsharpness of a latent electric charge image by setting the atomic ratio of an amorphous silicon carbide layer in a specified range. CONSTITUTION:The amorphous silicon carbide a-SiC layer 4 is formed on the functionally separated type OPC photosensitive body formed by laminating on a conductive substrate 1 a carrier generating layer 2 made of an organic semiconductor and a carrier transfer layer 3. The layer 4 has a composition formula: Si1-xCx, where satisfies the following inequality: 0.5<x<0.95, thus permitting the hardness of the surface of the photosensitive body to be enhanced, electrophotographic characteristics, such as photosensitivity, surface potential stability, and resistance to rise of residual potential to be improved, and stability for long time to be obtained. |
