LAMINATED SINGLE CRYSTAL SUBSTRATE HAVING ALUMINUM NITRIDE SINGLE CRYSTAL THIN FILM AND PRODUCTION THEREOF

摘要

PURPOSE:To form an AlN single crystal thin film having improved crystallinity by forming an Al oxynitride film and an AlN film on a sapphire substrate and forming an AlN single crystal thin film on the obtained strained super- lattice film. CONSTITUTION:A strained super-lattice film is produced by forming an Al oxynitride film and an AlN film on a sapphire substrate having sapphire R surface or C surface by a vapor process such as CVD process. An AlN single crystal thin film is synthesized and formed on the strained super-lattice film by a vapor process such as sputtering under a reaction pressure of about 0.00004Torr at a substrate temperature of about 1,150 deg.C to produce the objective laminated single crystal substrate.