| 摘要 |
<p>PURPOSE:To surely perform information recording and reading-out at high speeds by forming a semiconductor circuit section which is held at least between the 1st stripe electrode and ferroelectric thin film or between the 2nd stripe electrode and the ferroelectric thin film. CONSTITUTION:This ferroelectric memory is constituted of common electrodes 6 and 7 which are respectively provided along the arranging directions of the 1st and 2nd stripe electrodes at places apart from end sections of the electrodes 4 and 5, switching means 8 and 9 which respectively connect the 1st and 2nd stripe electrodes with the common electrodes 6 and 7 and, at the same time, select electrodes output of the stripe electrodes, and a semiconductor circuit section which is held at least between the 1st stripe electrodes 4 and a ferroelectric thin film 3 or between the 2nd stripe electrodes 5 and the thin film 3. Since data are recorded in memory cells 21 respectively constituted of intersections of the 1st and 2nd stripe electrodes 4 and 5 as residual polarization, information recording positions can be specified and, in addition, crosstalk between adjacent memory cells can be prevented. Therefore, information recording and reading-out can be performed surely at high speeds.</p> |
