| 摘要 |
PURPOSE:To obtain a stable longitudinal single mode selectivity and to vary an oscillation wavelength in a range of 10nm by applying a magnetic field from a specific direction to a semiconductor laser device. CONSTITUTION:An InGaAsP active layer 2 doped with 0.5wt.% of erbium with an organic metal epitaxially grown layer, a P-type InGaAsP antimeltback layer, a P-type InP clad layer 4, a P-type InGaAsP can layer 5 are sequentially grown in a multilayer from top of an N-type InP substrate 1. Then, a P-type side electrode 6 and an N-type side electrode 7 are formed by an electron beam depositing method, cleaved 300mum of resonator to obtain a desired laser structure. A coil 8 is provided above and below semiconductor lasers 1 - 7, and a magnetic field is applied in a direction of an arrow. Thus, an oscillation wavelength can be varied over a range of 10nm, and it can be oscillated in a longitudinal single mode over this wavelength varying range. |
