| 摘要 |
<p>PURPOSE:To fix the substrate potential of a semiconductor element by a method wherein at least one of leads is made to reach inside a cavity to come into contact with the side face of a semiconductor chip. CONSTITUTION:An end 3a of a lead l16 of an SDIP type semiconductor device is brought into contact with a side face S of a semiconductor chip 4, whereby the substrate potential of the chip 4 can be fixed to a potential given to the lead l16. The bent section 3a is provided to the end of the lead l16, and the side face of the section 3a is brought into contact with the side face S of the chip 4 so as to make a contact area large and to keep the substrate potential stable. Or, a cranked section (double bent section) 3b is provided, and when the tip of the cranked section 3b is brought into contact with a lower side face SD of the chip 4, a tip 3A of the lead l16 does not become a hindrance to a collet at loading.</p> |
