| 摘要 |
PURPOSE:To improve the crystal characteristics of an element forming surface and avoid the deterioration of electrical insulating characteristics under a high temperature by a method wherein a first substrate is provided on the circumfer ential part of the surface of a semiconductor film other than the element forming surface and a second substrate is provided on an insulating film formed on the center part of that surface of the semiconductor film. CONSTITUTION:A silicon carbide film 12 on which a semiconductor element is formed is built up by hetero-epitaxial growth on a single crystal silicon substrate 10. The silicon substrate 10 has a doughnut shape whose center part is removed and the circumferential part of the silicon carbide film 12 is supported by the silicon substrate 10. Further, the center part of the silicon carbide film 12 on which the semiconductor element is formed is supported by a silicon substrate 16 having a smaller diameter than the silicon substrate 10. With this constitution, sufficient electrical insulating characteristics can be maintained and, as the upper surface of the semiconductor film formed by epitaxial growth is used as the element forming surface, the surface has excellent crystal characteristics, so that the element having excellent electrical characteristics can be obtained.
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