HIGH PERFORMANCE SUB-MICRON P-CHANNEL TRANSISTOR WITH GERMANIUM IMPLANT,申请号AU19890035340-传众专利搜索

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发明名称	HIGH PERFORMANCE SUB-MICRON P-CHANNEL TRANSISTOR WITH GERMANIUM IMPLANT
摘要
申请公布号	AU3534089(A)	申请公布日期	1990.06.12
申请号	AU19890035340	申请日期	1989.11.21
申请人	MICRON TECHNOLOGY, INC.	发明人	RUOJIA R. LEE
分类号	H01L21/265;H01L21/283;H01L29/96;(IPC1-7):H01L21/265	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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