| 摘要 |
<p>PURPOSE:To prevent the erroneous writing of a semiconductor device, which is accompanied by the drop of power voltage drop in a wide temperature range by providing an invertor outputting a power voltage drop detection output. CONSTITUTION:The N channel type field effective type transistors of a depres sion type Q1, Q2 and Q4, the P channel type field effective type transistors of an enhancement type Q3 and Q5 and the N channel type field effective type transistor of the enhancement type Q6 are provided. The power voltage to be detected in the power voltage drop detection circuit is decided by the sum of the threshold ¦VTD1¦ of the first N channel type FETQ1, Q2 and Q4 having a positive temperature coefficient and the threshold ¦VTD1¦ of the first P channel type FETQ3 and Q5 having negative temperature coefficient. Thus, the power voltage to be detected hardly changes compared to a case decided only by a threshold VTN having the negative temperature coefficient. Thus, the malfunc tion of the semiconductor device, which is accompanied by power voltage drop in the wide temperature range can be prevented.</p> |
