| 摘要 |
PURPOSE:To secure the connection of a wiring layer and the conductor layer of a groove and help to densify a device by making the groove continuous till an element separation region and connecting the wiring layer on said element separation region. CONSTITUTION:A field oxide film 2 is formed on a p-type Si substrate 1 so as to surround an element formation region 3 and an n<+>-type impurity diffusion region 4 is formed on the surface of said region 3. A groove 5 continuous over the region 3 and the film 2 is formed. The depth of the groove 5 is larger than the thickness of the region 4 and smaller than that of the film 2. The surface of the substrate 1 exposed by forming the groove 5 is oxidized, a gate oxide film 6 is formed on the sidewall and the bottom face of the groove 5, and a polysilicon layer 7 is formed on the whole surface. Said layer 7 fills up the groove 5 and is adhered on the region 3 and the film 2. The layer 7 is etched, a conductor layer 9 made of the layer 7 put in the groove 5 is obtained, a wiring layer 10 is formed on the film 2, and the layer 9 is connected to the layer 10 only in the region on the film 2. |
