| 摘要 |
<p>PURPOSE:To provide a thin film type voltage-dependent nonlinear resistor having a large nonlinear coefficient, excellent characteristic stability, small size and high practical utility by incorporating predetermined contents of cobalt, antimony in first and second zinc oxide thin film layers and a predetermined content of manganese in a lead oxide thin film layer. CONSTITUTION:In a thin film type voltage-dependent nonlinear resistor, a lower electrode layer 2 made of a thin metal film is formed on a board 1, at least one set of a first zinc oxide (ZnO) thin film layer 3a and a zinc oxide (PbO) thin film layer 4 are sequentially laminated on the electrode layer, a second zinc oxide thin film layer 3b is formed on the laminate, and an upper electrode layer 5 is formed on the thin film layer. Cobalt and antimony of 0.1-0.5mol-% and 0.05-0.1mol-% in terms of CoO and Sb2O3 are contained in the first and second zinc oxide layer, and manganese of 0.05-0.1mol-% in terms of MoO is further contained in the zinc oxide layer.</p> |
