DEPOSITION OF AMORPHOUS SILICON FOR THE FORMATION OF INTERLEVEL DIELECTRICS IN SEMICONDUCTOR MEMORY DEVICES,申请号EP19880109247-传众专利搜索

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发明名称	DEPOSITION OF AMORPHOUS SILICON FOR THE FORMATION OF INTERLEVEL DIELECTRICS IN SEMICONDUCTOR MEMORY DEVICES
摘要
申请公布号	EP0296418(A3)	申请公布日期	1990.06.06
申请号	EP19880109247	申请日期	1988.06.10
申请人	MOTOROLA, INC.	发明人	GRISWOLD, MARK DOUGLAS
分类号	H01L21/205;H01L21/28;H01L21/321;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L21/283;H01L21/316;H01L29/62;H01L29/78	主分类号	H01L21/205
代理机构		代理人
主权项
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