| 摘要 |
PURPOSE:To stably introduce a starting raw material into a reaction chamber in large quantities by introducing a thin film forming raw material in a liquid state into an evaporation part provided in the vicinity of a substrate disposed in the reaction chamber, evaporating the raw material by means of heating, and forming a film of the resulting vapor on the substrate by diffusion. CONSTITUTION:A substrate holder 11 on which a substrate 12 is placed is disposed in a reaction chamber, and a thin film forming raw material introduced into a raw material evaporation part 13 is evaporated and vaporized by means of heating, and a film of the resulting vapor is formed on the above substrate 12 by diffusion. In the above thin film forming method, the above raw material evaporation part 13 has a groove 14 as a liquid reservoir and is formed into an annular shape, etc., and this evaporation part 13 is disposed in the vicinity of the above substrate 12. Then, the above thin film forming raw material liquefied in a liquid raw material tank 16 is pressurized by Ar and delivered and introduced, while being subjected to flow regulation by means of a valve 17, into the above groove 14 via an inlet tube 15. By this method, the introduction of the starting raw material can be stably carried out in large quantities, and further, the degree of freedom of its selection can also be increased. |
