发明名称 Semiconductor memory having barrier transistors connected between sense and restore circuits
摘要 A semiconductor memory comprises a memory cell for storing data, a bit line pair for transfering the data, a sense amplifier for amplifying the data from the bit line pair, a restore circuit directly connected to the bit line pair for restoring the data in the semiconductor memory, and a pair of constant voltage barrier transistors connected between the restore circuit and the sense amplifier for increasing the speed of sensing.
申请公布号 US4931992(A) 申请公布日期 1990.06.05
申请号 US19890310020 申请日期 1989.02.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGIHARA, MASAKI;OKADA, YOSHIO;FUJII, SYUSO
分类号 G11C11/4094 主分类号 G11C11/4094
代理机构 代理人
主权项
地址