首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
INSULATION GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号
JPH02146775(A)
申请公布日期
1990.06.05
申请号
JP19880301322
申请日期
1988.11.28
申请人
NEC CORP
发明人
KAMIYA YUKIO
分类号
H01L29/41;H01L29/78
主分类号
H01L29/41
代理机构
代理人
主权项
地址
您可能感兴趣的专利
APPARATUS, SYSTEM, AND METHOD FOR DETERMINING CONTACT WITH A MAGNETIC HEAD IN A TAPE DRIVE
Method and a device for recording and reproducing data onto and from a magnetic tape
Two-dimensional array spectroscopy method and apparatus
Phase difference compensating device and liquid crystal apparatus using the same
Ink delivery system and a method for replacing ink
Embedded antenna of mobile terminal
Notifying users of device events in a networked environment
Disk clamp assembly
Printing device and corresponding printing method used therein
Position measuring system
Liquid crystal display device and electronic device
Power supply circuit of delay locked loop
Internal voltage generator
Self-biased high voltage level shifter
Unknown
Leak detection method and system in nonmetallic underground pipes
Flat lamp
Sealing glass substrate for organic EL material and method of manufacturing organic EL display
Electron gun
Chip-based piezoelectric reasonator and liquid-phase sensor