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发明名称
FORMATION OF EPITAXIAL CRYSTAL LAYER AND MANUFACTURE OF STRIPE TYPE SEMICONDUCTOR LASER
摘要
申请公布号
JPH02146788(A)
申请公布日期
1990.06.05
申请号
JP19880301257
申请日期
1988.11.28
申请人
FUJITSU LTD
发明人
FUJII TOSHIO;SANDOUUADARUSHIYU
分类号
H01L21/203;H01S5/00
主分类号
H01L21/203
代理机构
代理人
主权项
地址
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