| 摘要 |
<p>In a broadband signal space switching device comprising a crosspoint matrix constructed in FET technology whose switch elements are respectively controlled by a crosspoint-associated memory cell which is decoder-controlled in two coordinate directions, the memory cell is formed by an n-channel transistor and two cross-coupled inverter circuits of which one has its input side connected to the appertaining decoder output of the one selection decoder via an n-channel transistor which, in turn, is charged at its control electrode with the corresponding output signal of the selection decoder, and of which the other leads at its output side to the control input of the appertaining switch element. The switch element is contructed from a single n-channel transistor.</p> |
