发明名称 Photoelectric linear image sensor having multilayer insulating layer to reduce defects
摘要 An improved linear image sensor of the type having a plurality of linearly arranged photodetecting resistors of amorphous silicon film, leader electrodes individually connected thereto, striped matrix electrodes, and an insulating layer covering the striped matrix electrodes is provided. Each of said leader electrodes are in contact with each of said striped matrix electrodes via a hole formed by patterning in the insulating layer. The insulating layer is made up of a plurality of insulation films laminated one over another by repeating the steps of film forming and patterning. Thus, even though pinholes occur during deposition or patterning of individual layers, there is only a small probability that two or more pinholes will occur at the same place. The risk of short circuits caused by pinholes is therefore substantially reduced.
申请公布号 US4931873(A) 申请公布日期 1990.06.05
申请号 US19880194423 申请日期 1988.05.13
申请人 FUJI ELECTRIC CO., LTD. 发明人 NISHIURA, MASAHARU
分类号 H04N1/19;H01L27/146;H04N1/028;H04N3/15 主分类号 H04N1/19
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