发明名称 |
Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same |
摘要 |
A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.
|
申请公布号 |
US4932033(A) |
申请公布日期 |
1990.06.05 |
申请号 |
US19880273721 |
申请日期 |
1988.11.17 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIYAZAWA, SEIICHI;OHTSUKA, MITSURU |
分类号 |
H01S5/223;H01S5/30;H01S5/40 |
主分类号 |
H01S5/223 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|