| 摘要 |
A Darlington-connected transistor circuit includes a drive stage transistor and an output stage transistor embodied in a semiconductor substrate having first and second elements in which the drive and output stage transistors are respectively disposed. The first element of the substrate has a shorter lifetime than the second substrate element, permitting higher switching speed to be achieved without affecting other characteristics of the circuit. The shorter lifetime can result from use of different semiconductor substrate materials or from selective diffusion of a lifetime killer.
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