发明名称 LOW STRESS HEAT SINKING FOR SEMICONDUCTORS.
摘要 <p>A semiconductor die is mounted on a metal substrate via intermediate layers which permit the die to be readily soldered to the combination while yet reducing thermal stresses. A dielectric layer is formed over the substrate, followed by another layer of a selected metal, either molybdenum or tungsten. Atop the metal layer is another layer comprising a mixture of solder and the selected metal. A layer of only solder is formed over the mixture, and the semiconductor die is bonded thereto by means of the layer of solder.</p>
申请公布号 EP0357606(A4) 申请公布日期 1990.06.05
申请号 EP19880901361 申请日期 1988.01.15
申请人 MOTOROLA, INC. 发明人 GREENSTEIN, BERNARD
分类号 B23K1/19;B23K35/00;H01L21/58;H01L21/60;H01L23/373 主分类号 B23K1/19
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