| 摘要 |
PURPOSE:To make quantized energy in a quantum fine line constant, and steep as well by forming a semiconductor layer having a quantum well structure on a plane substrate and after cleavage of the above semiconductor layer is made vertically to the plane of the substrate, by causing a semiconductor equipped with forbidden bands including such a band of the semiconductor making up a well layer to grow on a cleavage plane. CONSTITUTION:A semiconductor layer having a quantum well structure 11 is formed on a plane substrate and cleavage of its semiconductor layer made vertically to the plane substrate makes the semiconductor layers having the quantum well structure 11 finely linear. After that, the semiconductor layers 13 and 14 equipped with forbidden bands including such a band of the semiconductor making up a well layer out of the semiconductor layers having the quantum well structure 11 are made to grow on the above-mentioned cleavage plane. For example, a multi quantum well 11 in which a GalnAs layer and an InP layer are laminated alternately a plurality of times grows on the plane (100) of the InP substrate 10 and an InP layer 12 is formed thickly on the above well 11. Then an InP growth layer 13 is formed on cleavage plane after cleaving its substrate with a face (011). Subsequently, the substrate is cleaved again so that the width A of quantum well structure 11 may come to the order of 100-200Angstrom and the InP layer 14 is allowed to grow on the above cleavage plane. |
