| 摘要 |
PURPOSE:To improve the yielding rate of manufacturing semiconductors through a super fine pattern by measuring the thickness of a resist film and making a development time in a developing process vary on the basis of measurement results of its film thickness. CONSTITUTION:When a semiconductor device is manufactured through: a film formation process which forms a resist film on the surface of a semiconductor wafer W; an exposure process which exposes the above resist film through a mask having a prescribed pattern; a developing process which develops the resist film, the film thickness of the foregoing resist film is measured and a development time in the development process is made to vary on the basis of measurement results of its film thickness. For example, the film thickness measurement information of a wafer W which is obtained by a film thickness measuring device 507 of a coating section 509 is inputted in a control part 41 of a developing device 506 through a host computer 20. Both the drive device 44 of a wafer mounting table 45 and the flow regulating valve of a developer supply source 42 which communicates with a developer supply nozzle 43 are controlled by the control part 41. Developing time is thus controlled under the optimum condition. |
