| 摘要 |
An insulated gate SIT (IBCM-SIT) which is substantially free from punch-through and hot carriers and exhibits a triode characterisic. Also, an insulated gate SIT (ISIS-SIT) which exhibit a tetrode or pentode characteristic, not by an rs feedback effect, but by the addition of a static shield region. When those devices are used to construct a complementary circuit, no significant latch-up occurs.
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