Bilayer lithographic process

摘要

A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate; (b) providing a positive-working photoresist composition containing -OH or -NH- groups over the planarizing layer, (c) imagewise exposing the resist to activating radiation, (d) developing the exposed resist, (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: <IMAGE> wherein: X1 and X2 are individually chloro or <IMAGE> wherein R3 and R4 are individually H or alkyl; and R1 and R2 are individually H or alkyl; and (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.