Method for manufacturing integrated bipolar and MOS transistors,申请号US19880211010-传众专利搜索

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发明名称	Method for manufacturing integrated bipolar and MOS transistors
摘要
申请公布号	US4931407(A)	申请公布日期	1990.06.05
申请号	US19880211010	申请日期	1988.06.24
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	MAEDA, TAKEO;MAKITA, KOJI
分类号	H01L21/8249	主分类号	H01L21/8249
代理机构		代理人
主权项
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