发明名称
摘要 PURPOSE:To execute a uniform development extending over the whole surface of a wafer, by supplying a developing substance to the surface of the wafer by vapor phase, in case of development of photoresist. CONSTITUTION:In case of executing development, vapor or carrier vapor from a vapor or carrier vapor feed nozzle 7, and vapor of a developer from a developer feed nozzle 9 are fed into a developing chamber 6, respectively. Said vapor mixed with each other in the developing chamber 6, uniformly adheres onto the resist surface on a wafer 3 held on a wafer chuck 14, and development of the resist is executed. The mixing ratio of the water vapor or carrier vapor with the vapor of the developer can be adjusted so as to obtain an optimum development by adjusting flow rate adjusting valves 10 and 11. In this way, since a developing substance is fed by vapor phase, it does not occur that foreign matter adheres to the resist, or the resit peels off at the time of development, and a uniform development is obtained.
申请公布号 JPH0225501(B2) 申请公布日期 1990.06.04
申请号 JP19810115030 申请日期 1981.07.24
申请人 HITACHI SEISAKUSHO KK;HITACHI MAIKURO KONPYUUTA ENJINIARINGU KK 发明人 NAKAZAWA TOMIO;KADOTA KAZUYA;HIROBE YOSHIMICHI;NAGAO MAKI;AZUMA HIDEAKI;TAGI YOICHI
分类号 H01L21/30;G03F7/30;H01L21/027 主分类号 H01L21/30
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