| 摘要 |
PURPOSE:To make a deposition thickness of a metal thin and to make a wiring part fine by a method wherein, when a metal diffusion layer over the surface of an insulating film around a contact hole is formed, one part of the wiring part is piled up on the metal diffusion layer around the contact hole and this metal is deposited simultaneously on the inside bottom of the contact hole in order to form a metal layer. CONSTITUTION:A conductive metal (ITO) is diffused to parts where contact holes are made in an insulating film 8; metal diffusion layers 8a from inner periphery faces of the contact holes 9 to the surface of the insulating film around the contact holes are formed. One part of a wiring part 12 formed on the insulating film 8 is piled up on the metal diffusion layers 8a around the contact holes 9; thereby, this wiring part 12 and the metal diffusion layers 8a are connected in continuity. In addition, when a metal used as the wiring part 12 is deposited on the insulating films 8, this metal is deposited simultaneously on the inside bottom of the contact holes 9; contact metal layers 12a are formed on the inside bottom of the contact holes 9. Thereby, the metal diffusion layers 8a at the inner periphery faces of the contact holes and a source electrode and a drain electrode S, D of a thin-film transistor T are connected in continuity surely by the contact metal layers 12a. |
