发明名称 MANUFACTURE OF MASK PATTERN
摘要 <p>PURPOSE:To eliminate the irregurality on a split boundary line when a large area mask pattern is formed by the syntheses of a split pattern by a method wherein the boundary line between small divisions is formed in a non-linearly and irregular shape. CONSTITUTION:When the desired large area mask pattern such as a liquid crystal electrode mask pattern, for example, is going to be divided into a plurality of small divisions, a boundary line C is formed in irregular shape, especially, it is formed into an irregular saw-tooth shape, and small area mask patterns (a) and (b) corresponding to the split small divisions are formed. When the above-mentioned small-area mask pattern (a) and (b) are compositely formed on a large area substrate, as both mask patterns are connected by an irregularlyformed boundary line C, the deviation and the like generating along the boundary line does not have regularity and continuity, or as the deviation is small, it is not recognized as a deviation by human eyes.</p>
申请公布号 JPH02143513(A) 申请公布日期 1990.06.01
申请号 JP19880296183 申请日期 1988.11.25
申请人 DAINIPPON PRINTING CO LTD 发明人 MATSUI HIROYUKI;OKAZAKI AKIRA
分类号 G02F1/13;G03F1/70;H01L21/027;H01L21/30 主分类号 G02F1/13
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