发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To enable an interleave system to be employed and to heighten the output throughput of the system by providing an output circuit to hold readout data from a random access memory, etc., until it is established and to send it to the outside. CONSTITUTION:The output circuit DOB which holds the readout data from the random access memories RAM0-RAM3, etc., to be set at operating states next until the readout data from the random access memories RAM0-RAM3 are established and sends them to the outside is provided at a memory unit, etc., including plural random access memories RAM0-RAM3 set at the operating states alternatively according to corresponding start-up selecting signals CS0-CS3. Therefore, output contention by the plural random access memories, etc., can be prevented occurring. In such a way, it is possible to shorten the cycle time of the memory unit to a time almost equivalent to data holding time, and to heighten the output throughput.
申请公布号 JPH02143993(A) 申请公布日期 1990.06.01
申请号 JP19880295940 申请日期 1988.11.25
申请人 HITACHI LTD 发明人 YANAGISAWA KAZUMASA
分类号 G11C11/417;G11C11/401;G11C11/409;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/417
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