发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To augment the bonding strength of a metallic wiring onto an interlayer insulating film as well as the counter strength of an outer connecting electrode against external force thereby enhancing the reliability of an electrode by a method wherein the bonding strength between the metallic wiring and the underneath interlayer insulating film is augmented by eliminating a barrier layer from an electrode leading out part. CONSTITUTION:A metallic wiring 8 is provided on a PSG 7 while one end of the metallic wiring 8 is connected to a diffused layer 3 via a through hole 7a formed in the PSG film 7 and a CVD film 6. On the other hand, a rectangular electrode leading-out part 9a is formed on the other end of the wiring 8. A final passivation film 9 is formed on the metallic wiring 8 while the electrode leading-out part 8a is externally exposed from another through hole 8a made in the passivation film 9. In such a constitution, the metallic wiring 8 is composed of an Al-Si alloy while a barrier layer 12 is partially laid down underneath the metallic wiring 8. That is, the barrier layer 12 is provided on the contact part of the said N<+> diffused layer 3 and the peripheral part thereof but not provided underneath the electrode leading-out part 8a.
申请公布号 JPH02143531(A) 申请公布日期 1990.06.01
申请号 JP19880298599 申请日期 1988.11.25
申请人 HITACHI LTD;HITACHI MICRO COMPUT ENG LTD 发明人 UCHIDA KEN;ITAGAKI TATSUO;SATO TSUNEO;ICHIHARA SEIICHI;NAGASAWA KOICHI
分类号 H01L23/52;H01L21/3205;H01L21/321;H01L21/60 主分类号 H01L23/52
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