MIS TYPE SEMICONDUCTOR DEVICE OF HIGH BREAKDOWN STRENGTH,申请号JP19880298911-传众专利搜索

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发明名称	MIS TYPE SEMICONDUCTOR DEVICE OF HIGH BREAKDOWN STRENGTH
摘要
申请公布号	JPH02143565(A)	申请公布日期	1990.06.01
申请号	JP19880298911	申请日期	1988.11.25
申请人	FUJITSU LTD	发明人	MATSUMURA HIDEAKI
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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