| 摘要 |
PURPOSE:To reduce the occupied area of a resistor on a semiconductor chip, and realize high density integration by forming a groove in the lower layer of a polycrystalline silicon film, and forming another silicon film also on the inner wall of the groove. CONSTITUTION:Two groove about 3mum deep are formed in a semiconductor substrate 8; an insulating film 3 is grown on the substrate 8 surface containing the inner wall of the trench; a polycrystalline silicon film is grown on the film 3 surface; the polycrystalline silicon film is selectively etched and eliminated; a silicon film 6 of a specified resistance value is formed; then an insulating film 4, a coating film 7 and an insulating film 5 are formed; contacts are opened on both ends of the film 6; a barrier metal layer 2 in contact with the film 6 is formed; an aluminum electrode 1 is formed thereon. By this set-up, the occupied area of a resistor with respect to the surface of a semiconductor chip is reduced, and the degree of integration of a device can be improved. |
