| 摘要 |
PURPOSE:To enable an optical element having good resolution to be obtained easily with a stencil having a fine size of 0.1mum or less independently from thickness, area, shape or position by depositing a metallic material by a selective CVD process for producing a predetermined soft X-ray absorber pattern on a support substrate. CONSTITUTION:On a membrane material 1 consisting of a laminate of substrates of a conductor or semiconductor, there are provided an insulator stencil 2. The membrane material 1 is subjected to atmosphere containing gaseous mixture 3 of tungsten fluoride and hydrogen under a reduced pressure while it is heated. If Si is contained in the membrane material 1, a reacion of ZWF6+3Si 2W+3 SiF4 is caused. If the membrane material 1 is conductive, a reaction of WF4+3H2 W+6HF is caused. In either case, W 4 is deposited in deep holes in the stencil to produce a soft X-ray absorber pattern of W. Thus, an mean free path of the reaction gas components is increased by conducting the CVD under a reduced pressure and, thereby, deposition of the W pattern as fine as 0.1mum or less is facilitated. |
