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发明名称
SEMICONDUCTOR DEVICE HAVING A REGION DOPED TO A LEVEL EXCEEDING THE SOLUBILITY LIMIT
摘要
申请公布号
EP0332101(A3)
申请公布日期
1990.05.30
申请号
EP19890103883
申请日期
1989.03.06
申请人
FUJITSU LIMITED
发明人
FURUMURA, YUJI;MIENO, FUMITAKE;NAKAZAWA, TSUTOMU;ESHITA, TAKASHI;MAEDA, MAMORU;YAMAUCHI, TSUNENORI
分类号
H01L29/08;H01L29/16;H01L29/36;H01L29/737;(IPC1-7):H01L29/08;H01L29/72
主分类号
H01L29/08
代理机构
代理人
主权项
地址
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