发明名称 Semiconductor memory device of one transistor - one capacitor memory cell type.
摘要 <p>A semiconductor memory cell of one transistor - one capacitor memory cell type in which a storage capacitor of a first memory cell is formed on a switching transistor of a second memory cell as well as on a switching transistor of the first memory cell, and a storage capacitor of the second memory cell is formed on the switching transistor of the first memory cell as well as on the switching transistor of the second memory cell.</p>
申请公布号 EP0370407(A1) 申请公布日期 1990.05.30
申请号 EP19890121316 申请日期 1989.11.17
申请人 NEC CORPORATION 发明人 ISHIJIMA, TOSHIYUKI C/O NEC CORPORATION
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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