发明名称 |
Semiconductor memory device of one transistor - one capacitor memory cell type. |
摘要 |
<p>A semiconductor memory cell of one transistor - one capacitor memory cell type in which a storage capacitor of a first memory cell is formed on a switching transistor of a second memory cell as well as on a switching transistor of the first memory cell, and a storage capacitor of the second memory cell is formed on the switching transistor of the first memory cell as well as on the switching transistor of the second memory cell.</p> |
申请公布号 |
EP0370407(A1) |
申请公布日期 |
1990.05.30 |
申请号 |
EP19890121316 |
申请日期 |
1989.11.17 |
申请人 |
NEC CORPORATION |
发明人 |
ISHIJIMA, TOSHIYUKI C/O NEC CORPORATION |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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