| 摘要 |
PURPOSE:To extremely diminish the inter-electrode spacing of two working electrodes to sub-micron order by determining the inter-electrode spacing by the thickness of insulating films. CONSTITUTION:A photoresist is applied on a silicon substrate 1 to 1mum thickness. The silicon substrate 2 is then put into an oven and is baked. Thereafter the substrate is subjected to contact exposing by using a chromium mask. This substrate 2 is developed in a resist developing soln. and is subjected to washing and drying, by which mask patterns are transferred onto the resist. Chromium and platinum are then successively deposited by sputtering thereon. The substrate 2 is immersed into methyl ethyl ketone and is subjected to an ultrasonic treatment by which the resist exclusive of the electrode forming parts is peeled and the lower working electrode 3 is formed. Silicon dioxide is thereafter deposited by sputtering to form the 1st insulating film 4. The resist is again peeled in the methyl ethyl ketone to form the upper working electrodes 5, 6. The surface of the substrate 2 is coated and the 2nd insulating film 6 is formed. The insulating films 8, 4 are etched to expose the electrode 3. |
