发明名称 Manufacture of high purity low arsenic anhydrous hydrogen fluoride
摘要 A process for manufacturing high purity anhydrous hydrogen fluoride (HF) having low levels of arsenic impurity by contacting anhydrous hydrogen fluoride product, or an intermediate product obtained during the manufacture of HF, with hydrogen peroxide to oxidize the arsenic impurity in the presence of a catalyst which comprises a catalytic amount of a component selected from the group consisting of molybdenum, a molybdenum compound, vanadium, and a vanadium compound, and a phosphate compound. The volatile trivalent arsenic impurity in the anhydrous hydrogen fluoride is oxidized to a non-volatile pentavalent arsenic compound and the resultant mixture is distilled to recover high purity anhydrous hydrogen fluoride with reduced levels of arsenic impurity. In one embodiment, an oxidizing agent such as nitric acid or a nitrate salt is added to the reaction mixture to oxidize organic compounds.
申请公布号 US4929435(A) 申请公布日期 1990.05.29
申请号 US19880217497 申请日期 1988.07.11
申请人 ALLIED-SIGNAL INC. 发明人 BOGHEAN, BARRY J.;SUBBANNA, SOMANAHALLI N.;REDMON, CHARLES L.;WAMSER, CHRISTIAN A.
分类号 B01J27/16;B01J27/24;C01B7/19;C01G28/00 主分类号 B01J27/16
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